翻訳と辞書 Words near each other ・ Indium arsenide ・ Indium arsenide antimonide phosphide ・ Indium bromide ・ Indium chalcogenides ・ Indium chloride ・ Indium Corporation ・ Indium gallium aluminium nitride ・ Indium gallium arsenide ・ Indium gallium arsenide phosphide ・ Indium gallium nitride ・ Indium gallium phosphide ・ Indium gallium zinc oxide ・ Indium halides ・ Indium lung ・ Indium nitride ・ Indium phosphide ・ Indium tin oxide ・ Indium trihydride ・ Indium wire ・ Indium(I) bromide ・ Indium(III) bromide ・ Indium(III) chloride ・ Indium(III) fluoride ・ Indium(III) hydroxide ・ Indium(III) oxide ・ Indium(III) selenide ・ Indium(III) sulfate ・ Indium(III) sulfide ・ Indium(III) telluride ・ Indium-111 Dictionary Lists mini英和辞書 mini和英辞書 Webster 1913 Latin-English FOLDOC Wikipedia English ウィキペディア

翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Indium phosphide ： ウィキペディア英語版 Indium phosphide |Section2= |Section3= |Section4= |Section7= |Section8= }} Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. ==Manufacturing== Indium phosphide is prepared from the reaction of white phosphorus and indium iodide at 400 °C. 〔(Indium Phosphide at HSDB )〕 ==Uses== InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Indium phosphide」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.